@inproceedings{52d88814863e49889762a35298792a95,
title = "Polarization engineering of ingan-based nanostructures for low-threshold diode lasers and high-efficiency light emitting diodes",
abstract = "Novel InGaN-based active regions with momentum matrix element were investigated achieving improved gain and radiative recombination . Staggered InGaN quantum wells (QWs) and type-II GaNAs QWs demonstrated improvement in recombination rate and optical gain for green regime, and these active regions have the to be implemented for high-efficiency green light emitting diodes and lasers.",
author = "Nelson Tansu and Hongping Zhao and Arif, {Ronald A.} and Ee, {Yik Khoon} and Guangyu Liu and Xiaohang Li and Huang, {G. S.}",
year = "2008",
doi = "10.1109/IPGC.2008.4781335",
language = "English (US)",
isbn = "9781424429059",
series = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",
booktitle = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",
note = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 ; Conference date: 08-12-2008 Through 11-12-2008",
}