Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

S. L. Ng; H. S. Lim; Y. L. Lam; Y. C. Chan; B. S. Ooi; V. Aimez; J. Beauvais; J. Beerens

doi:10.1049/el:20020151

Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

S. L. Ng^*, H. S. Lim, Y. L. Lam, Y. C. Chan, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.

Original language	English (US)
Pages (from-to)	241-242
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1049/el:20020151
State	Published - Feb 28 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020151

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title = "Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process",

abstract = "A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.",

author = "Ng, {S. L.} and Lim, {H. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Ooi, {B. S.} and V. Aimez and J. Beauvais and J. Beerens",

year = "2002",

month = feb,

day = "28",

doi = "10.1049/el:20020151",

language = "English (US)",

volume = "38",

pages = "241--242",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

AU - Ng, S. L.

AU - Lim, H. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Ooi, B. S.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2002/2/28

Y1 - 2002/2/28

N2 - A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.

AB - A quantum well intermixing process for the fabrication of polarization insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure was reported. The heterostructure used in this study was a lattice-matched InGaAs/InGaAsP multiple quantum well (MQW) laser structure operating at 1.55 μm. Results showed that a modulation depth of ∼7 dB and 16 dB could be achieved for the intermixed and as-grown modulators.

UR - http://www.scopus.com/inward/record.url?scp=0037186115&partnerID=8YFLogxK

U2 - 10.1049/el:20020151

DO - 10.1049/el:20020151

M3 - Article

AN - SCOPUS:0037186115

SN - 0013-5194

VL - 38

SP - 241

EP - 242

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

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