Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

S. L. Ng; H. S. Djie; H. S. Lim; B. S. Ooi; Y. L. Lam; Y. C. Chan; P. Dowd; V. Aimez; J. Beauvais; J. Beerens

Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

S. L. Ng^*, H. S. Djie, H. S. Lim, B. S. Ooi, Y. L. Lam, Y. C. Chan, P. Dowd, V. Aimez, J. Beauvais, J. Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A lattice matched multiple quantum well (MQW) structure was used to fabricate 10-channel electro-absorption (EA) modulator arrays. The method was based on using gray mask lithography and a low-energy arsenic ion-implantation induced disordering (IIID). The EA modulators were characterized through photocurrent measurements using end-fire-coupling technique. The polarization sensitivity of the devices was determined using the degree of intermixing on the group V sublattices.

Original language	English (US)
Pages (from-to)	40-41
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2001
Externally published	Yes
Event	14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: Nov 11 2001 → Nov 15 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{22df952add474c53a55fd5d15fe3a13e,

title = "Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip",

abstract = "A lattice matched multiple quantum well (MQW) structure was used to fabricate 10-channel electro-absorption (EA) modulator arrays. The method was based on using gray mask lithography and a low-energy arsenic ion-implantation induced disordering (IIID). The EA modulators were characterized through photocurrent measurements using end-fire-coupling technique. The polarization sensitivity of the devices was determined using the degree of intermixing on the group V sublattices.",

author = "Ng, {S. L.} and Djie, {H. S.} and Lim, {H. S.} and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and P. Dowd and V. Aimez and J. Beauvais and J. Beerens",

year = "2001",

language = "English (US)",

volume = "1",

pages = "40--41",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 11-11-2001 Through 15-11-2001",

}

TY - JOUR

T1 - Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

AU - Ng, S. L.

AU - Djie, H. S.

AU - Lim, H. S.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Dowd, P.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2001

Y1 - 2001

N2 - A lattice matched multiple quantum well (MQW) structure was used to fabricate 10-channel electro-absorption (EA) modulator arrays. The method was based on using gray mask lithography and a low-energy arsenic ion-implantation induced disordering (IIID). The EA modulators were characterized through photocurrent measurements using end-fire-coupling technique. The polarization sensitivity of the devices was determined using the degree of intermixing on the group V sublattices.

AB - A lattice matched multiple quantum well (MQW) structure was used to fabricate 10-channel electro-absorption (EA) modulator arrays. The method was based on using gray mask lithography and a low-energy arsenic ion-implantation induced disordering (IIID). The EA modulators were characterized through photocurrent measurements using end-fire-coupling technique. The polarization sensitivity of the devices was determined using the degree of intermixing on the group V sublattices.

UR - http://www.scopus.com/inward/record.url?scp=0035650729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035650729

SN - 1092-8081

VL - 1

SP - 40

EP - 41

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 11 November 2001 through 15 November 2001

ER -

Polarisation-dependent performance of multiple wavelength electro-absorption intensity modulator arrays on a single InGaAs/InGaAsP chip

Abstract

ASJC Scopus subject areas

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