Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

H. Wenisch; K. Ohkawa; A. Isemann; M. Fehrer; D. Hommel

doi:10.1049/el:19980669

Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

H. Wenisch^*, K. Ohkawa, A. Isemann, M. Fehrer, D. Hommel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm² and the operating voltage is ∼14V. The lifetime in pulsed operation exceeds 1 h.

Original language	English (US)
Pages (from-to)	891-893
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1049/el:19980669
State	Published - Apr 30 1998
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@article{46f6168c0a574b588d267254c341fdf5,

title = "Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates",

abstract = "Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm2 and the operating voltage is ∼14V. The lifetime in pulsed operation exceeds 1 h.",

author = "H. Wenisch and K. Ohkawa and A. Isemann and M. Fehrer and D. Hommel",

year = "1998",

month = apr,

day = "30",

doi = "10.1049/el:19980669",

language = "English (US)",

volume = "34",

pages = "891--893",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "9",

}

TY - JOUR

T1 - Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

AU - Wenisch, H.

AU - Ohkawa, K.

AU - Isemann, A.

AU - Fehrer, M.

AU - Hommel, D.

PY - 1998/4/30

Y1 - 1998/4/30

N2 - Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm2 and the operating voltage is ∼14V. The lifetime in pulsed operation exceeds 1 h.

AB - Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm2 and the operating voltage is ∼14V. The lifetime in pulsed operation exceeds 1 h.

UR - http://www.scopus.com/inward/record.url?scp=0032050844&partnerID=8YFLogxK

U2 - 10.1049/el:19980669

DO - 10.1049/el:19980669

M3 - Article

AN - SCOPUS:0032050844

SN - 0013-5194

VL - 34

SP - 891

EP - 893

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

Abstract

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