Abstract
This study demonstrates significant improvements of ZnO nanowire lasers by the piezophototronic effect. The laser output power can be enhanced by a factor of 4.96, and the threshold voltage can be decreased from 48 to 20 V by applying pressure. The mechanism of the improved performance can be attributed to the enhanced carrier injection and recombination due to the piezophototronic effect.
Original language | English (US) |
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Pages (from-to) | 1602832 |
Journal | ADVANCED MATERIALS |
Volume | 29 |
Issue number | 5 |
DOIs | |
State | Published - Nov 22 2016 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2022-06-03Acknowledgements: This work was financially supported by the National Science Foundation for Distinguished Young Scholars of China (61425021), the Natural Science Foundation of China (11374296, 11674290, 11134009, and 61376054), and the National Program for Support of Top-notch Young Professionals. The authors would like to thank Prof. Yu Han and Dr. Yihan Zhu from the King Abdullah University of Science and Technology for HRTEM observation and fruitful discussion on the c-axis orientation determination with QSTEM simulation.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.