Pieces of 2D materials: The next step to crystallize the polycrystalline domains

Jui-Han Fu; Yichen Cai; Jie Shen; Hayato Sugisaki; Kohei Nanjo; Karin To; Chia-Wen Wu; Yu Han; Lain-Jong Li; Vincent Tung

doi:10.1016/j.matt.2023.05.034

Pieces of 2D materials: The next step to crystallize the polycrystalline domains

Jui-Han Fu, Yichen Cai, Jie Shen, Hayato Sugisaki, Kohei Nanjo, Karin To, Chia-Wen Wu, Yu Han, Lain-Jong Li, Vincent Tung

Research output: Contribution to journal › Article › peer-review

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer the tantalizing potential for pushing technology nodes below 1 nm. However, their scalable adoption for non-silicon (Si) electronics has been challenging. Achieving the lab-to-fab transition of 2D TMDs requires disruptive innovations in upscalable epitaxy growth, reaction mechanisms, defect passivation, and high-throughput manufacturing paradigms. This perspective discusses the emerging step-directed epitaxy, which begins with low steps and exploits the surface reconstruction of photolithographically defined channels, affording arrays of nanoribbons with widths approaching those needed for digital electronics applications. An energy-minimized, structured substrate-epilayer configuration is established. Notably, using these energetically favorable steps as catalytically active sites could have profound implications for membrane science, water desalination, radiative cooling, and lithium extraction industries. Finally, leveraging the power of artificial intelligence (AI), the upscale production of edge-directed epitaxy growth of single-crystal 2D TMDs can be accelerated, leading to their widespread adoption in non-Si electronics and other industries.

Original language	English (US)
Pages (from-to)	2136-2152
Number of pages	17
Journal	Matter
Volume	6
Issue number	7
DOIs	https://doi.org/10.1016/j.matt.2023.05.034
State	Published - Jul 5 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-07-11
Acknowledged KAUST grant number(s): CCF-3079
Acknowledgements: J.-H.F. and V.T. are indebted to the financial support from the University of Tokyo and the Japan Society for the Promotion of Science (JSPS, 23H00253). V.T. is beholden to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award CCF-3079. L.-J.L. acknowledges support from the University of Hong Kong. L.-J.L. is thankful for the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22).

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10.1016/j.matt.2023.05.034

Cite this

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title = "Pieces of 2D materials: The next step to crystallize the polycrystalline domains",

abstract = "Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer the tantalizing potential for pushing technology nodes below 1 nm. However, their scalable adoption for non-silicon (Si) electronics has been challenging. Achieving the lab-to-fab transition of 2D TMDs requires disruptive innovations in upscalable epitaxy growth, reaction mechanisms, defect passivation, and high-throughput manufacturing paradigms. This perspective discusses the emerging step-directed epitaxy, which begins with low steps and exploits the surface reconstruction of photolithographically defined channels, affording arrays of nanoribbons with widths approaching those needed for digital electronics applications. An energy-minimized, structured substrate-epilayer configuration is established. Notably, using these energetically favorable steps as catalytically active sites could have profound implications for membrane science, water desalination, radiative cooling, and lithium extraction industries. Finally, leveraging the power of artificial intelligence (AI), the upscale production of edge-directed epitaxy growth of single-crystal 2D TMDs can be accelerated, leading to their widespread adoption in non-Si electronics and other industries.",

author = "Jui-Han Fu and Yichen Cai and Jie Shen and Hayato Sugisaki and Kohei Nanjo and Karin To and Chia-Wen Wu and Yu Han and Lain-Jong Li and Vincent Tung",

note = "KAUST Repository Item: Exported on 2023-07-11 Acknowledged KAUST grant number(s): CCF-3079 Acknowledgements: J.-H.F. and V.T. are indebted to the financial support from the University of Tokyo and the Japan Society for the Promotion of Science (JSPS, 23H00253). V.T. is beholden to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award CCF-3079. L.-J.L. acknowledges support from the University of Hong Kong. L.-J.L. is thankful for the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22).",

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AU - Fu, Jui-Han

AU - Cai, Yichen

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AU - To, Karin

AU - Wu, Chia-Wen

AU - Han, Yu

AU - Li, Lain-Jong

AU - Tung, Vincent

N1 - KAUST Repository Item: Exported on 2023-07-11 Acknowledged KAUST grant number(s): CCF-3079 Acknowledgements: J.-H.F. and V.T. are indebted to the financial support from the University of Tokyo and the Japan Society for the Promotion of Science (JSPS, 23H00253). V.T. is beholden to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award CCF-3079. L.-J.L. acknowledges support from the University of Hong Kong. L.-J.L. is thankful for the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22).

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N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer the tantalizing potential for pushing technology nodes below 1 nm. However, their scalable adoption for non-silicon (Si) electronics has been challenging. Achieving the lab-to-fab transition of 2D TMDs requires disruptive innovations in upscalable epitaxy growth, reaction mechanisms, defect passivation, and high-throughput manufacturing paradigms. This perspective discusses the emerging step-directed epitaxy, which begins with low steps and exploits the surface reconstruction of photolithographically defined channels, affording arrays of nanoribbons with widths approaching those needed for digital electronics applications. An energy-minimized, structured substrate-epilayer configuration is established. Notably, using these energetically favorable steps as catalytically active sites could have profound implications for membrane science, water desalination, radiative cooling, and lithium extraction industries. Finally, leveraging the power of artificial intelligence (AI), the upscale production of edge-directed epitaxy growth of single-crystal 2D TMDs can be accelerated, leading to their widespread adoption in non-Si electronics and other industries.

AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer the tantalizing potential for pushing technology nodes below 1 nm. However, their scalable adoption for non-silicon (Si) electronics has been challenging. Achieving the lab-to-fab transition of 2D TMDs requires disruptive innovations in upscalable epitaxy growth, reaction mechanisms, defect passivation, and high-throughput manufacturing paradigms. This perspective discusses the emerging step-directed epitaxy, which begins with low steps and exploits the surface reconstruction of photolithographically defined channels, affording arrays of nanoribbons with widths approaching those needed for digital electronics applications. An energy-minimized, structured substrate-epilayer configuration is established. Notably, using these energetically favorable steps as catalytically active sites could have profound implications for membrane science, water desalination, radiative cooling, and lithium extraction industries. Finally, leveraging the power of artificial intelligence (AI), the upscale production of edge-directed epitaxy growth of single-crystal 2D TMDs can be accelerated, leading to their widespread adoption in non-Si electronics and other industries.

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DO - 10.1016/j.matt.2023.05.034

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SP - 2136

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JO - Matter

JF - Matter

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ER -

Pieces of 2D materials: The next step to crystallize the polycrystalline domains

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