Physical properties and diffusion characteristics of CVD-grown TiSiN films

Dalaver Anjum; Katharine Dovidenko; Serge Oktyabrsky; Eric Eisenbraun; Alain E. Kaloyeros

Physical properties and diffusion characteristics of CVD-grown TiSiN films

Dalaver Anjum^*, Katharine Dovidenko, Serge Oktyabrsky, Eric Eisenbraun, Alain E. Kaloyeros

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI₄ + SiI₄ + NH₃ + H₂ chemistry at substrate temperature, 370 °C, and SiI₄ - to-TiI₄ precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti₃₂Si₂₁N₄₂ films were predominantly consisted of a mixture of cubic TiN and amorphous SiN_x phases. The specific electrical resistivity of the films was about 2000 μω-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 °C. Breakdown of this diffusion barrier occurred at 600 °C and was accompanied by the formation of Cu₃Si protrusions at the TiSiN/Si interface.

Original language	English (US)
Pages (from-to)	341-346
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	697
State	Published - 2002
Externally published	Yes
Event	Surface Engineering 2001 - Fundamentals and Applications - Boston, MA, United States Duration: Nov 26 2002 → Nov 29 2002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{67ac74ee11cc4330b3b9b4447a84e0ae,

title = "Physical properties and diffusion characteristics of CVD-grown TiSiN films",

abstract = "TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370 °C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μω-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 °C. Breakdown of this diffusion barrier occurred at 600 °C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.",

author = "Dalaver Anjum and Katharine Dovidenko and Serge Oktyabrsky and Eric Eisenbraun and Kaloyeros, {Alain E.}",

year = "2002",

language = "English (US)",

volume = "697",

pages = "341--346",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Surface Engineering 2001 - Fundamentals and Applications ; Conference date: 26-11-2002 Through 29-11-2002",

}

TY - JOUR

T1 - Physical properties and diffusion characteristics of CVD-grown TiSiN films

AU - Anjum, Dalaver

AU - Dovidenko, Katharine

AU - Oktyabrsky, Serge

AU - Eisenbraun, Eric

AU - Kaloyeros, Alain E.

PY - 2002

Y1 - 2002

N2 - TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370 °C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μω-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 °C. Breakdown of this diffusion barrier occurred at 600 °C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

AB - TiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370 °C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μω-cm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550 °C. Breakdown of this diffusion barrier occurred at 600 °C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

UR - http://www.scopus.com/inward/record.url?scp=0036453642&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036453642

SN - 0272-9172

VL - 697

SP - 341

EP - 346

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Surface Engineering 2001 - Fundamentals and Applications

Y2 - 26 November 2002 through 29 November 2002

ER -

Physical properties and diffusion characteristics of CVD-grown TiSiN films

Abstract

ASJC Scopus subject areas

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