Physical characterization of novel metal electrodes for Hf-based transistors

P. S. Lysaght*, H. C. Wen, H. Alshareef, K. Choi, R. Harris, H. Luan, Y. Senzaki, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Metal electrode materials are being extensively evaluated as potential replacements for polysilicon in order to eliminate gate depletion, reduce gate resistance, overcome equivalent oxide thickness (EOT) scaling limitations and Fermi level pinning effects associated with the reaction between Hf-based dielectric films and the polysilicon electrode. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) using X-ray spectra and electron energy loss spectra (EELS) were used to produce elemental profiles of dielectric and metal electrode constituents with particular emphasis on interfacial interactions. High spatial resolution chemical scan profiles of silicon, oxygen, nitrogen, and hafnium from the dielectric components in conjunction with various transition metals including hafnium, tantalum, molybdenum and ruthenium have been acquired to characterize the extent of material intermixing and crystallization as a function of deposition parameters and anneal temperature. The influence of the atomic percent Si in ternary compounds consisting of transition metal nitrides is presented within the context of Rutherford backscattering (RBS) composition data. Finally, factors influencing metal workfunction are presented based on physical and electrical characterization of high-k capacitors and transistors.

Original languageEnglish (US)
Title of host publicationCHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference
Number of pages5
StatePublished - Sep 9 2005
Externally publishedYes
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Other2005 International Conference on Characterization and Metrology for ULSI Technology
Country/TerritoryUnited States
CityRichardson, TX

ASJC Scopus subject areas

  • General Physics and Astronomy


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