Physical characterization challenges in 45 nm technology node

K. Li; P. Liu; Q. Wang; I. Tee; J. Teong

doi:10.1109/IPFA.2008.4588202

Physical characterization challenges in 45 nm technology node

K. Li^*, P. Liu, Q. Wang, I. Tee, J. Teong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.

Original language	English (US)
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588202
State	Published - 2008
Externally published	Yes
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: Jul 7 2008 → Jul 11 2008

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	07/7/08 → 07/11/08

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IPFA.2008.4588202

Cite this

Li, K., Liu, P., Wang, Q., Tee, I., & Teong, J. (2008). Physical characterization challenges in 45 nm technology node. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA Article 4588202 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588202

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title = "Physical characterization challenges in 45 nm technology node",

abstract = "The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.",

author = "K. Li and P. Liu and Q. Wang and I. Tee and J. Teong",

year = "2008",

doi = "10.1109/IPFA.2008.4588202",

language = "English (US)",

isbn = "1424420393",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",

}

Li, K, Liu, P, Wang, Q, Tee, I & Teong, J 2008, Physical characterization challenges in 45 nm technology node. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588202, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 07/7/08. https://doi.org/10.1109/IPFA.2008.4588202

Physical characterization challenges in 45 nm technology node. / Li, K.; Liu, P.; Wang, Q. et al.
2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588202 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Physical characterization challenges in 45 nm technology node

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PY - 2008

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N2 - The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.

AB - The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.

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DO - 10.1109/IPFA.2008.4588202

M3 - Conference contribution

AN - SCOPUS:51949087971

SN - 1424420393

SN - 9781424420391

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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T2 - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Y2 - 7 July 2008 through 11 July 2008

ER -

Physical characterization challenges in 45 nm technology node

Abstract

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Other

ASJC Scopus subject areas

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