Photoresponse induced by Ge nanodots on SiO2/Si substrate

Paola Castrucci; Silvano Del Gobbo; Eugen Speiser; Manuela Scarselli; Maurizio De Crescenzi; Guillaume Amiard; Antoine Ronda; Isabelle Berbezier

doi:10.1016/j.jnoncrysol.2010.05.040

Photoresponse induced by Ge nanodots on SiO₂/Si substrate

Paola Castrucci^*, Silvano Del Gobbo, Eugen Speiser, Manuela Scarselli, Maurizio De Crescenzi, Guillaume Amiard, Antoine Ronda, Isabelle Berbezier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO₂ thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO₂/Si(100) substrate was dramatically enhanced up to a factor of 10³. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.

Original language	English (US)
Pages (from-to)	1940-1942
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	356
Issue number	37-40
DOIs	https://doi.org/10.1016/j.jnoncrysol.2010.05.040
State	Published - Aug 15 2010
Externally published	Yes

Keywords

73.63.Bd
78.56.-a

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.jnoncrysol.2010.05.040

Cite this

@article{a70400395fcb42cf88865251e7fe3ea8,

title = "Photoresponse induced by Ge nanodots on SiO2/Si substrate",

abstract = "Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.",

keywords = "73.63.Bd, 78.56.-a",

author = "Paola Castrucci and {Del Gobbo}, Silvano and Eugen Speiser and Manuela Scarselli and {De Crescenzi}, Maurizio and Guillaume Amiard and Antoine Ronda and Isabelle Berbezier",

year = "2010",

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doi = "10.1016/j.jnoncrysol.2010.05.040",

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T1 - Photoresponse induced by Ge nanodots on SiO2/Si substrate

AU - Castrucci, Paola

AU - Del Gobbo, Silvano

AU - Speiser, Eugen

AU - Scarselli, Manuela

AU - De Crescenzi, Maurizio

AU - Amiard, Guillaume

AU - Ronda, Antoine

AU - Berbezier, Isabelle

PY - 2010/8/15

Y1 - 2010/8/15

N2 - Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.

AB - Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.

KW - 73.63.Bd

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