Abstract
This work present an approach on fabricating advanced single crystal semiconducting hetero-structures optoelectronics devices. It demonstrates a new way of stacking the n-type MoS2 single crystal with p-type perovskite CH3NH3PbBr3 single crystal in the vertical direction enables us to p-n diode. Shows good current-voltage rectifying behavior in dark and light condition. Successful fabrication of single crystal CH3NH3PbBr3/MoS2. Optoelectronics devices is a step ahead in using single crystal hetero-structures devices.
Original language | English (US) |
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Title of host publication | 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
ISBN (Print) | 9781538653364 |
DOIs | |
State | Published - Jul 2018 |
Externally published | Yes |