Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

H. S. Lim; B. S. Ooi; Y. L. Lam; Y. C. Chan; V. Aimez; J. Beauvais; J. Beerens

doi:10.1109/CLEOPR.1999.817956

Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

H. S. Lim, B. S. Ooi, Y. L. Lam, Y. C. Chan, V. Aimez, J. Beauvais, J. Beerens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs) [ 1,2]. In this paper, we report a high selectivity QWI process using a low energy arsenic implantation induced disordering technique. Since it is known that fiee electrons fiom impurities result in high optical absorption and degrade the quality of the material after intermixing [2], arsenic, an electrically neutral species in the InGaAs/InGaAsP system, was chosen for the process development. It is noted that arsenic as a neutral impurity is not widely studied in the InGaAs-InGaAsP systems. The relatively low implantation energy, 360keV, reduces the damage generation and results in a shallow implantation depth far away fiom the active region.

Original language	English (US)
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1030-1031
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.817956
State	Published - 1999
Externally published	Yes
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: Aug 30 1999 → Sep 3 1999

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	3

Other

Other	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/Territory	Korea, Republic of
City	Seoul
Period	08/30/99 → 09/3/99

Bibliographical note

Publisher Copyright:
© 1999 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
General Physics and Astronomy

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10.1109/CLEOPR.1999.817956

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Lim, H. S., Ooi, B. S., Lam, Y. L., Chan, Y. C., Aimez, V., Beauvais, J., & Beerens, J. (1999). Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 1030-1031). Article 817956 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.817956

Lim, H. S. ; Ooi, B. S. ; Lam, Y. L. et al. / Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing. CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 1030-1031 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics).

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title = "Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing",

abstract = "Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs) [ 1,2]. In this paper, we report a high selectivity QWI process using a low energy arsenic implantation induced disordering technique. Since it is known that fiee electrons fiom impurities result in high optical absorption and degrade the quality of the material after intermixing [2], arsenic, an electrically neutral species in the InGaAs/InGaAsP system, was chosen for the process development. It is noted that arsenic as a neutral impurity is not widely studied in the InGaAs-InGaAsP systems. The relatively low implantation energy, 360keV, reduces the damage generation and results in a shallow implantation depth far away fiom the active region.",

author = "Lim, {H. S.} and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and V. Aimez and J. Beauvais and J. Beerens",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",

year = "1999",

doi = "10.1109/CLEOPR.1999.817956",

language = "English (US)",

series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lim, HS, Ooi, BS, Lam, YL, Chan, YC, Aimez, V, Beauvais, J & Beerens, J 1999, Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 817956, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 1030-1031, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 08/30/99. https://doi.org/10.1109/CLEOPR.1999.817956

Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing. / Lim, H. S.; Ooi, B. S.; Lam, Y. L. et al.
CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 1030-1031 817956 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

AU - Lim, H. S.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 1999

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N2 - Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs) [ 1,2]. In this paper, we report a high selectivity QWI process using a low energy arsenic implantation induced disordering technique. Since it is known that fiee electrons fiom impurities result in high optical absorption and degrade the quality of the material after intermixing [2], arsenic, an electrically neutral species in the InGaAs/InGaAsP system, was chosen for the process development. It is noted that arsenic as a neutral impurity is not widely studied in the InGaAs-InGaAsP systems. The relatively low implantation energy, 360keV, reduces the damage generation and results in a shallow implantation depth far away fiom the active region.

AB - Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs) [ 1,2]. In this paper, we report a high selectivity QWI process using a low energy arsenic implantation induced disordering technique. Since it is known that fiee electrons fiom impurities result in high optical absorption and degrade the quality of the material after intermixing [2], arsenic, an electrically neutral species in the InGaAs/InGaAsP system, was chosen for the process development. It is noted that arsenic as a neutral impurity is not widely studied in the InGaAs-InGaAsP systems. The relatively low implantation energy, 360keV, reduces the damage generation and results in a shallow implantation depth far away fiom the active region.

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M3 - Conference contribution

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T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

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BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

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Lim HS, Ooi BS, Lam YL, Chan YC, Aimez V, Beauvais J et al. Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 1030-1031. 817956. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). doi: 10.1109/CLEOPR.1999.817956

Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

Abstract

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Bibliographical note

ASJC Scopus subject areas

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