Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

T. K. Ng; S. F. Yoon; W. J. Fan; W. K. Loke; S. Z. Wang; S. T. Ng

doi:10.1116/1.1617284

Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

T. K. Ng, S. F. Yoon^*, W. J. Fan, W. K. Loke, S. Z. Wang, S. T. Ng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy E_B=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy E_A=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.

Original language	English (US)
Pages (from-to)	2324-2328
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1617284
State	Published - 2003
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{c06e6cdaa244411c9b9cd13491c87132,

title = "Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy",

abstract = "The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy EA=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.",

author = "Ng, {T. K.} and Yoon, {S. F.} and Fan, {W. J.} and Loke, {W. K.} and Wang, {S. Z.} and Ng, {S. T.}",

year = "2003",

doi = "10.1116/1.1617284",

language = "English (US)",

volume = "21",

pages = "2324--2328",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

AU - Ng, T. K.

AU - Yoon, S. F.

AU - Fan, W. J.

AU - Loke, W. K.

AU - Wang, S. Z.

AU - Ng, S. T.

PY - 2003

Y1 - 2003

N2 - The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy EA=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.

AB - The photoluminiscence (PL) quenching mechanisms in GaInNAs/GaAs quantum wells, which were grown by solid source molecular beam epitaxy , were studied from 4 to 150 K. THe integrated PL intensity versus temperature characteristic was found to be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV was predicted to be formed from a localized state that traps carriers at temperatures below ∼100 K. Another center with larger activation energy EA=38 meV was found to have a significant PL quenching effect at temperature above ∼120 K.

UR - http://www.scopus.com/inward/record.url?scp=0942289267&partnerID=8YFLogxK

U2 - 10.1116/1.1617284

DO - 10.1116/1.1617284

M3 - Article

AN - SCOPUS:0942289267

SN - 1071-1023

VL - 21

SP - 2324

EP - 2328

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

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