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Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping
T. Mitsuyu
*
,
K. Ohkawa
, O. Yamazaki
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
›
peer-review
53
Scopus citations
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Dive into the research topics of 'Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping'. Together they form a unique fingerprint.
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Material Science
Photoluminescence
100%
Molecular Beam Epitaxy
100%
Gallium Arsenide
33%
Epitaxy
33%
Keyphrases
Low-energy Ions
100%
Shallow Acceptor
33%
Emission Region
33%