Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

Guan Sun; Yujie J. Ding; Guangyu Liu; G. S. Huang; Hongping Zhao; Nelson Tansu; Jacob B. Khurgin

doi:10.1063/1.3462324

Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

Guan Sun^*, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, Jacob B. Khurgin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified due to recombination of electrons in the AlN coupling barrier with heavy holes in the GaN quantum wells. Photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells, is observed.

Original language	English (US)
Article number	021904
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3462324
State	Published - Jul 12 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3462324

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@article{71ed724121924005a1483f9129effd60,

title = "Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells",

abstract = "We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified due to recombination of electrons in the AlN coupling barrier with heavy holes in the GaN quantum wells. Photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells, is observed.",

author = "Guan Sun and Ding, {Yujie J.} and Guangyu Liu and Huang, {G. S.} and Hongping Zhao and Nelson Tansu and Khurgin, {Jacob B.}",

year = "2010",

month = jul,

day = "12",

doi = "10.1063/1.3462324",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "2",

}

TY - JOUR

T1 - Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

AU - Sun, Guan

AU - Ding, Yujie J.

AU - Liu, Guangyu

AU - Huang, G. S.

AU - Zhao, Hongping

AU - Tansu, Nelson

AU - Khurgin, Jacob B.

PY - 2010/7/12

Y1 - 2010/7/12

N2 - We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified due to recombination of electrons in the AlN coupling barrier with heavy holes in the GaN quantum wells. Photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells, is observed.

AB - We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified due to recombination of electrons in the AlN coupling barrier with heavy holes in the GaN quantum wells. Photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells, is observed.

UR - http://www.scopus.com/inward/record.url?scp=77955162741&partnerID=8YFLogxK

U2 - 10.1063/1.3462324

DO - 10.1063/1.3462324

M3 - Article

AN - SCOPUS:77955162741

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021904

ER -

Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells

Abstract

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