@inproceedings{3fff478f80654c40ba939dfcbbfb4181,
title = "Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells",
abstract = "Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.",
author = "Guan Sun and Tripathy, {Suvranta K.} and Ding, {Yujie J.} and Guangyu Liu and Huang, {G. S.} and Hongping Zhao and Nelson Tansu and Khurgin, {Jacob B.}",
year = "2010",
month = dec,
day = "1",
language = "English (US)",
isbn = "9781557528896",
series = "Optics InfoBase Conference Papers",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",
note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",
}