The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - Sep 1 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)