Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

T. K. Ng; S. F. Yoon; S. Z. Wang; L. H. Lin; Y. Ochiai; T. Matsusue

doi:10.1063/1.1601297

Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

T. K. Ng^*, S. F. Yoon, S. Z. Wang, L. H. Lin, Y. Ochiai, T. Matsusue

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.

Original language	English (US)
Pages (from-to)	3110-3114
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1601297
State	Published - Sep 1 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1601297

Cite this

@article{3bc9abed82274f5eaf254b43afa5992e,

title = "Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics",

abstract = "The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.",

author = "Ng, {T. K.} and Yoon, {S. F.} and Wang, {S. Z.} and Lin, {L. H.} and Y. Ochiai and T. Matsusue",

year = "2003",

month = sep,

day = "1",

doi = "10.1063/1.1601297",

language = "English (US)",

volume = "94",

pages = "3110--3114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

AU - Ng, T. K.

AU - Yoon, S. F.

AU - Wang, S. Z.

AU - Lin, L. H.

AU - Ochiai, Y.

AU - Matsusue, T.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.

AB - The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.

UR - http://www.scopus.com/inward/record.url?scp=0141633885&partnerID=8YFLogxK

U2 - 10.1063/1.1601297

DO - 10.1063/1.1601297

M3 - Article

AN - SCOPUS:0141633885

SN - 0021-8979

VL - 94

SP - 3110

EP - 3114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

Abstract

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