Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%

Andrea Tomasi; Bertrand Paviet-Salomon; Damien Lachenal; Silvia Martin De Nicolas; Martin Ledinsky; Antoine Descoeudres; Sylvain Nicolay; Stefaan De Wolf; Christophe Ballif

doi:10.1109/PVSC.2014.6924898

Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%

Andrea Tomasi, Bertrand Paviet-Salomon, Damien Lachenal, Silvia Martin De Nicolas, Martin Ledinsky, Antoine Descoeudres, Sylvain Nicolay, Stefaan De Wolf, Christophe Ballif

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm², an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3644-3648
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6924898
State	Published - Oct 15 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	06/8/14 → 06/13/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Amorphous silicon
crystalline silicon
heterojunctions
photovoltaic cells
solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6924898

Cite this

Tomasi, A., Paviet-Salomon, B., Lachenal, D., De Nicolas, S. M., Ledinsky, M., Descoeudres, A., Nicolay, S., De Wolf, S., & Ballif, C. (2014). Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3644-3648). Article 6924898 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924898

Tomasi, Andrea ; Paviet-Salomon, Bertrand ; Lachenal, Damien et al. / Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 3644-3648 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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title = "Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%",

abstract = "We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm2, an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.",

keywords = "Amorphous silicon, crystalline silicon, heterojunctions, photovoltaic cells, solar cells",

author = "Andrea Tomasi and Bertrand Paviet-Salomon and Damien Lachenal and {De Nicolas}, {Silvia Martin} and Martin Ledinsky and Antoine Descoeudres and Sylvain Nicolay and {De Wolf}, Stefaan and Christophe Ballif",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

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doi = "10.1109/PVSC.2014.6924898",

language = "English (US)",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

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Tomasi, A, Paviet-Salomon, B, Lachenal, D, De Nicolas, SM, Ledinsky, M, Descoeudres, A, Nicolay, S, De Wolf, S & Ballif, C 2014, Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924898, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 3644-3648, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 06/8/14. https://doi.org/10.1109/PVSC.2014.6924898

Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%. / Tomasi, Andrea; Paviet-Salomon, Bertrand; Lachenal, Damien et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 3644-3648 6924898 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tomasi, Andrea

AU - Paviet-Salomon, Bertrand

AU - Lachenal, Damien

AU - De Nicolas, Silvia Martin

AU - Ledinsky, Martin

AU - Descoeudres, Antoine

AU - Nicolay, Sylvain

AU - De Wolf, Stefaan

AU - Ballif, Christophe

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm2, an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.

AB - We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm2, an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.

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KW - crystalline silicon

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Y2 - 8 June 2014 through 13 June 2014

ER -

Tomasi A, Paviet-Salomon B, Lachenal D, De Nicolas SM, Ledinsky M, Descoeudres A et al. Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 3644-3648. 6924898. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6924898

Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%

Abstract

Publication series

Other

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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