Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n -type GaN

Masato Ono; Katsushi Fujii; Takashi Ito; Yasuhiro Iwaki; Akira Hirako; Takafumi Yao; Kazuhiro Ohkawa

doi:10.1063/1.2432116

Photoelectrochemical reaction and H₂ generation at zero bias optimized by carrier concentration of n -type GaN

Masato Ono^*, Katsushi Fujii, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Takafumi Yao, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

The authors studied the photoelectrochemical properties dependent on carrier concentration of n -type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7× 1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

Original language	English (US)
Article number	054708
Journal	JOURNAL OF CHEMICAL PHYSICS
Volume	126
Issue number	5
DOIs	https://doi.org/10.1063/1.2432116
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1063/1.2432116

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title = "Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n -type GaN",

abstract = "The authors studied the photoelectrochemical properties dependent on carrier concentration of n -type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7× 1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.",

author = "Masato Ono and Katsushi Fujii and Takashi Ito and Yasuhiro Iwaki and Akira Hirako and Takafumi Yao and Kazuhiro Ohkawa",

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T1 - Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n -type GaN

AU - Ono, Masato

AU - Fujii, Katsushi

AU - Ito, Takashi

AU - Iwaki, Yasuhiro

AU - Hirako, Akira

AU - Yao, Takafumi

AU - Ohkawa, Kazuhiro

PY - 2007

Y1 - 2007

N2 - The authors studied the photoelectrochemical properties dependent on carrier concentration of n -type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7× 1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

AB - The authors studied the photoelectrochemical properties dependent on carrier concentration of n -type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7× 1017 cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.

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U2 - 10.1063/1.2432116

DO - 10.1063/1.2432116

M3 - Article

AN - SCOPUS:33846964940

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VL - 126

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JF - JOURNAL OF CHEMICAL PHYSICS

IS - 5

M1 - 054708

ER -

Photoelectrochemical reaction and H₂ generation at zero bias optimized by carrier concentration of n -type GaN

Abstract

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