Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

Katsushi Fujii; Kazuhiro Ohkawa

doi:10.1143/JJAP.44.L909

Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

Katsushi Fujii^*, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

Original language	English (US)
Pages (from-to)	L909-L911
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	28-32
DOIs	https://doi.org/10.1143/JJAP.44.L909
State	Published - 2005
Externally published	Yes

Keywords

Gallium nitride
P-type
Photoelectrochemical cells
Photoelectrolysis
Semiconductor-electrolyte contacts

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.44.L909

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title = "Photoelectrochemical properties of p-type GaN in comparison with n-type GaN",

abstract = "We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.",

keywords = "Gallium nitride, P-type, Photoelectrochemical cells, Photoelectrolysis, Semiconductor-electrolyte contacts",

author = "Katsushi Fujii and Kazuhiro Ohkawa",

year = "2005",

doi = "10.1143/JJAP.44.L909",

language = "English (US)",

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journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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T1 - Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

AU - Fujii, Katsushi

AU - Ohkawa, Kazuhiro

PY - 2005

Y1 - 2005

N2 - We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

AB - We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

KW - Gallium nitride

KW - P-type

KW - Photoelectrochemical cells

KW - Photoelectrolysis

KW - Semiconductor-electrolyte contacts

UR - http://www.scopus.com/inward/record.url?scp=30344471067&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.L909

DO - 10.1143/JJAP.44.L909

M3 - Article

AN - SCOPUS:30344471067

SN - 0021-4922

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SP - L909-L911

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 28-32

ER -

Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

Abstract

Keywords

ASJC Scopus subject areas

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