Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

Katsushi Fujii*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations


We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

Original languageEnglish (US)
Pages (from-to)L909-L911
JournalJapanese Journal of Applied Physics
Issue number28-32
StatePublished - 2005
Externally publishedYes


  • Gallium nitride
  • P-type
  • Photoelectrochemical cells
  • Photoelectrolysis
  • Semiconductor-electrolyte contacts

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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