Photoelectrochemical properties of nonpolar and semipolar GaN

Katsushi Fujii; Yasuhiro Iwaki; Hisashi Masui; Troy J. Baker; Michael Iza; Hitoshi Sato; John Kaeding; Takafumi Yao; James S. Speck; Steven P. DenBaars; Shuji Nakamura; Kazuhiro Ohkawa

doi:10.1143/JJAP.46.6573

Photoelectrochemical properties of nonpolar and semipolar GaN

Katsushi Fujii^*, Yasuhiro Iwaki, Hisashi Masui, Troy J. Baker, Michael Iza, Hitoshi Sato, John Kaeding, Takafumi Yao, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The photoelectrochemical and electrical properties of nonpolar (112̄0)-oriented and semipolar (112̄2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (112̄0) < (0001) < (112̄2). The highest photocurrent at a zero bias had been expected for the (112̄0) sample considering the flatband potential, but the photocurrent of the (112̄0) sample was the lowest among the three. This could have been due to the electric properties of the (112̄0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

Original language	English (US)
Pages (from-to)	6573-6578
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.46.6573
State	Published - Oct 9 2007
Externally published	Yes

Keywords

Carrier transport
Gallium nitride
Nonpolar
Photoelectrochemistry
Semiconductor-electrolyte contacts
Semipolar

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.46.6573

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@article{a290bb6c2f824878a9f65dc3642f3fb9,

title = "Photoelectrochemical properties of nonpolar and semipolar GaN",

abstract = "The photoelectrochemical and electrical properties of nonpolar (11{\=2}0)-oriented and semipolar (11{\=2}2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (11{\=2}0) < (0001) < (11{\=2}2). The highest photocurrent at a zero bias had been expected for the (11{\=2}0) sample considering the flatband potential, but the photocurrent of the (11{\=2}0) sample was the lowest among the three. This could have been due to the electric properties of the (11{\=2}0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.",

keywords = "Carrier transport, Gallium nitride, Nonpolar, Photoelectrochemistry, Semiconductor-electrolyte contacts, Semipolar",

author = "Katsushi Fujii and Yasuhiro Iwaki and Hisashi Masui and Baker, {Troy J.} and Michael Iza and Hitoshi Sato and John Kaeding and Takafumi Yao and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura and Kazuhiro Ohkawa",

year = "2007",

month = oct,

day = "9",

doi = "10.1143/JJAP.46.6573",

language = "English (US)",

volume = "46",

pages = "6573--6578",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 A",

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TY - JOUR

T1 - Photoelectrochemical properties of nonpolar and semipolar GaN

AU - Fujii, Katsushi

AU - Iwaki, Yasuhiro

AU - Masui, Hisashi

AU - Baker, Troy J.

AU - Iza, Michael

AU - Sato, Hitoshi

AU - Kaeding, John

AU - Yao, Takafumi

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

AU - Ohkawa, Kazuhiro

PY - 2007/10/9

Y1 - 2007/10/9

N2 - The photoelectrochemical and electrical properties of nonpolar (112̄0)-oriented and semipolar (112̄2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (112̄0) < (0001) < (112̄2). The highest photocurrent at a zero bias had been expected for the (112̄0) sample considering the flatband potential, but the photocurrent of the (112̄0) sample was the lowest among the three. This could have been due to the electric properties of the (112̄0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

AB - The photoelectrochemical and electrical properties of nonpolar (112̄0)-oriented and semipolar (112̄2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (112̄0) < (0001) < (112̄2). The highest photocurrent at a zero bias had been expected for the (112̄0) sample considering the flatband potential, but the photocurrent of the (112̄0) sample was the lowest among the three. This could have been due to the electric properties of the (112̄0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

KW - Carrier transport

KW - Gallium nitride

KW - Nonpolar

KW - Photoelectrochemistry

KW - Semiconductor-electrolyte contacts

KW - Semipolar

UR - http://www.scopus.com/inward/record.url?scp=35348822404&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.6573

DO - 10.1143/JJAP.46.6573

M3 - Article

AN - SCOPUS:35348822404

SN - 0021-4922

VL - 46

SP - 6573

EP - 6578

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10 A

ER -

Photoelectrochemical properties of nonpolar and semipolar GaN

Abstract

Keywords

ASJC Scopus subject areas

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