Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

David Hwang; Benjamin P. Yonkee; Burhan Saif Addin; Robert M. Farrell; Shuji Nakamura; James S. Speck; Steven DenBaars

doi:10.1364/oe.24.022875

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

David Hwang, Benjamin P. Yonkee, Burhan Saif Addin, Robert M. Farrell, Shuji Nakamura, James S. Speck, Steven DenBaars

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

Original language	English (US)
Pages (from-to)	22875
Journal	Optics Express
Volume	24
Issue number	20
DOIs	https://doi.org/10.1364/oe.24.022875
State	Published - Sep 23 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{2485d01045e148e484cac6fa96de3c26,

title = "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates",

abstract = "We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).",

author = "David Hwang and Yonkee, {Benjamin P.} and Addin, {Burhan Saif} and Farrell, {Robert M.} and Shuji Nakamura and Speck, {James S.} and Steven DenBaars",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

month = sep,

day = "23",

doi = "10.1364/oe.24.022875",

language = "English (US)",

volume = "24",

pages = "22875",

journal = "Optics Express",

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publisher = "Optical Society of America",

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T1 - Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

AU - Hwang, David

AU - Yonkee, Benjamin P.

AU - Addin, Burhan Saif

AU - Farrell, Robert M.

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/9/23

Y1 - 2016/9/23

N2 - We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

AB - We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

UR - http://hdl.handle.net/10754/623578

UR - https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875

UR - http://www.scopus.com/inward/record.url?scp=84989809917&partnerID=8YFLogxK

U2 - 10.1364/oe.24.022875

DO - 10.1364/oe.24.022875

M3 - Article

SN - 1094-4087

VL - 24

SP - 22875

JO - Optics Express

JF - Optics Express

IS - 20

ER -

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

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