Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures

Kazuhiro Ohkawa, Yusuke Uetake, Martin Velazquez-Rizo, Daisuke Iida

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


We have improved the InGaN/GaN heterointerface to achieve higher energy conversion efficiency by replacing a uniform InGaN layer with a graded In-content InGaN layer. Even In0.08Ga0.92N/GaN heterostructure has a large conduction band offset, which is large enough to suppress the photocurrent in the photocatalytic system. The graded In-content InGaN structures were grown by metalorganic vapor-phase epitaxy by changing the TMIn flow rate gradually. X-ray reciprocal space mapping confirmed the graded structures. The graded InGaN/GaN structure significantly increased photocurrent and H2 generation by 50% and more compared with the conventional uniform InGaN/GaN structures.
Original languageEnglish (US)
Pages (from-to)569-573
Number of pages5
JournalNano Energy
StatePublished - Mar 7 2019

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KAUST Repository Item: Exported on 2020-10-01


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