TY - JOUR
T1 - Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures
AU - Ohkawa, Kazuhiro
AU - Uetake, Yusuke
AU - Velazquez-Rizo, Martin
AU - Iida, Daisuke
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2019/3/7
Y1 - 2019/3/7
N2 - We have improved the InGaN/GaN heterointerface to achieve higher energy conversion efficiency by replacing a uniform InGaN layer with a graded In-content InGaN layer. Even In0.08Ga0.92N/GaN heterostructure has a large conduction band offset, which is large enough to suppress the photocurrent in the photocatalytic system. The graded In-content InGaN structures were grown by metalorganic vapor-phase epitaxy by changing the TMIn flow rate gradually. X-ray reciprocal space mapping confirmed the graded structures. The graded InGaN/GaN structure significantly increased photocurrent and H2 generation by 50% and more compared with the conventional uniform InGaN/GaN structures.
AB - We have improved the InGaN/GaN heterointerface to achieve higher energy conversion efficiency by replacing a uniform InGaN layer with a graded In-content InGaN layer. Even In0.08Ga0.92N/GaN heterostructure has a large conduction band offset, which is large enough to suppress the photocurrent in the photocatalytic system. The graded In-content InGaN structures were grown by metalorganic vapor-phase epitaxy by changing the TMIn flow rate gradually. X-ray reciprocal space mapping confirmed the graded structures. The graded InGaN/GaN structure significantly increased photocurrent and H2 generation by 50% and more compared with the conventional uniform InGaN/GaN structures.
UR - http://hdl.handle.net/10754/631563
UR - https://www.sciencedirect.com/science/article/pii/S2211285519301995
UR - http://www.scopus.com/inward/record.url?scp=85062637268&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2019.03.011
DO - 10.1016/j.nanoen.2019.03.011
M3 - Article
SN - 2211-2855
VL - 59
SP - 569
EP - 573
JO - Nano Energy
JF - Nano Energy
ER -