@inproceedings{7ea2050d50124d078ee88e016cc86a56,
title = "Photoelectrochemical H2 gas generation improvement with thin p-type GaN layer on n-type GaN",
abstract = "Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.",
author = "Katsushi Fujii and Masato Ono and Yasuhiro Iwaki and Takafumi Yao and Kazuhiro Ohkawa",
year = "2008",
doi = "10.1149/1.3039773",
language = "English (US)",
isbn = "9781605606552",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "17",
pages = "177--183",
booktitle = "ECS Transactions - Fundamentals of Energy Storage and Conversion",
edition = "17",
note = "Fundamentals of Energy Storage and Conversion - 213th Meeting of the Electrochemical Society ; Conference date: 18-05-2008 Through 23-05-2008",
}