Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

Muhammad Atif Khan; Danial Khan; Amit Kumar Goyal; Yehia Massoud

doi:10.1117/12.2687569

Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

Muhammad Atif Khan, Danial Khan, Amit Kumar Goyal, Yehia Massoud^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

Original language	English (US)
Title of host publication	Optoelectronic Devices and Integration XII
Editors	Xuping Zhang, Baojun Li, Changyuan Yu, Xinliang Zhang
Publisher	SPIE
ISBN (Electronic)	9781510667778
DOIs	https://doi.org/10.1117/12.2687569
State	Published - 2023
Event	Optoelectronic Devices and Integration XII 2023 - Beijing, China Duration: Oct 14 2023 → Oct 16 2023

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12764
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Optoelectronic Devices and Integration XII 2023
Country/Territory	China
City	Beijing
Period	10/14/23 → 10/16/23

Bibliographical note

Publisher Copyright:
© 2023 SPIE.

Keywords

2D transistor
MoTe2
Photocurrent
Phototransistor
Variable Power Laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2687569

Cite this

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title = "Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor",

abstract = "We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.",

keywords = "2D transistor, MoTe2, Photocurrent, Phototransistor, Variable Power Laser",

author = "Khan, {Muhammad Atif} and Danial Khan and Goyal, {Amit Kumar} and Yehia Massoud",

note = "Publisher Copyright: {\textcopyright} 2023 SPIE.; Optoelectronic Devices and Integration XII 2023 ; Conference date: 14-10-2023 Through 16-10-2023",

year = "2023",

doi = "10.1117/12.2687569",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Xuping Zhang and Baojun Li and Changyuan Yu and Xinliang Zhang",

booktitle = "Optoelectronic Devices and Integration XII",

address = "United States",

}

Khan, MA , Khan, D , Goyal, AK & Massoud, Y 2023, Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor. in X Zhang, B Li, C Yu & X Zhang (eds), Optoelectronic Devices and Integration XII., 127641K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12764, SPIE, Optoelectronic Devices and Integration XII 2023, Beijing, China, 10/14/23. https://doi.org/10.1117/12.2687569

Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor. / Khan, Muhammad Atif ; Khan, Danial ; Goyal, Amit Kumar et al.
Optoelectronic Devices and Integration XII. ed. / Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang. SPIE, 2023. 127641K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12764).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

AU - Khan, Muhammad Atif

AU - Khan, Danial

AU - Goyal, Amit Kumar

AU - Massoud, Yehia

PY - 2023

Y1 - 2023

N2 - We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

AB - We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

KW - 2D transistor

KW - MoTe2

KW - Photocurrent

KW - Phototransistor

KW - Variable Power Laser

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U2 - 10.1117/12.2687569

DO - 10.1117/12.2687569

M3 - Conference contribution

AN - SCOPUS:85182607345

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optoelectronic Devices and Integration XII

A2 - Zhang, Xuping

A2 - Li, Baojun

A2 - Yu, Changyuan

A2 - Zhang, Xinliang

PB - SPIE

T2 - Optoelectronic Devices and Integration XII 2023

Y2 - 14 October 2023 through 16 October 2023

ER -

Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

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