Abstract
The efficiency of photocurrent extraction was studied directly inside operating Colloidal Quantum Dot (CQD) photovoltaic devices. A model was derived from first principles for a thin film p-n junction with a linearly spatially dependent electric field. Using this model, we were able to clarify the origins of recent improvement in CQD solar cell performance. From current-voltage diode characteristics under 1 sun conditions, we extracted transport lengths ranging from 39 nm to 86 nm for these materials. Characterization of the intensity dependence of photocurrent extraction revealed that the dominant loss mechanism limiting the transport length is trap-mediated recombination. © 2013 AIP Publishing LLC.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 211101 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 21 |
| DOIs | |
| State | Published - Nov 19 2013 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of glovebox environment, respectively. This publication is based on part of work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
