Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector: Effect of surface band bending

Ming Wei Chen; Jose Ramon Duran Retamal; Cheng Ying Chen; Jr Hau He

doi:10.1109/LED.2011.2180012

Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector: Effect of surface band bending

Ming Wei Chen^*, Jose Ramon Duran Retamal, Cheng Ying Chen, Jr Hau He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

Original language	English (US)
Article number	6144690
Pages (from-to)	411-413
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1109/LED.2011.2180012
State	Published - Mar 2012
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received November 19, 2011; revised December 8, 2011; accepted December 9, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Taiwan National Science Council under Grants NSC 99-2112-M-002-024-MY3, NSC 99-2622-E-002-019-CC3, and 99-2120-M-007-011 and in part by Aim for Top University Project from the Ministry of Education. The review of this letter was arranged by Editor P. K-L. Yu.

Keywords

Nanowire (NW)
ZnO
photodetector
relaxation time
surface band bending (SBB)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2180012

Cite this

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abstract = "The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.",

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note = "Funding Information: Manuscript received November 19, 2011; revised December 8, 2011; accepted December 9, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Taiwan National Science Council under Grants NSC 99-2112-M-002-024-MY3, NSC 99-2622-E-002-019-CC3, and 99-2120-M-007-011 and in part by Aim for Top University Project from the Ministry of Education. The review of this letter was arranged by Editor P. K-L. Yu.",

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AU - Chen, Cheng Ying

AU - He, Jr Hau

N1 - Funding Information: Manuscript received November 19, 2011; revised December 8, 2011; accepted December 9, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Taiwan National Science Council under Grants NSC 99-2112-M-002-024-MY3, NSC 99-2622-E-002-019-CC3, and 99-2120-M-007-011 and in part by Aim for Top University Project from the Ministry of Education. The review of this letter was arranged by Editor P. K-L. Yu.

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N2 - The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

AB - The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

KW - Nanowire (NW)

KW - ZnO

KW - photodetector

KW - relaxation time

KW - surface band bending (SBB)

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JF - IEEE Electron Device Letters

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Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector: Effect of surface band bending

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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