Photocarrier relaxation behavior of a single ZnO nanowire UV photodetector: Effect of surface band bending

Ming Wei Chen*, Jose Ramon Duran Retamal, Cheng Ying Chen, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

Original languageEnglish (US)
Article number6144690
Pages (from-to)411-413
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number3
DOIs
StatePublished - Mar 2012
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received November 19, 2011; revised December 8, 2011; accepted December 9, 2011. Date of publication February 3, 2012; date of current version February 23, 2012. This work was supported in part by the Taiwan National Science Council under Grants NSC 99-2112-M-002-024-MY3, NSC 99-2622-E-002-019-CC3, and 99-2120-M-007-011 and in part by Aim for Top University Project from the Ministry of Education. The review of this letter was arranged by Editor P. K-L. Yu.

Keywords

  • Nanowire (NW)
  • ZnO
  • photodetector
  • relaxation time
  • surface band bending (SBB)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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