TY - JOUR
T1 - Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO3
Heterostructures
AU - Li, Dong
AU - Zheng, Dongxing
AU - Jin, Chao
AU - Li, Peng
AU - Liu, Xinjun
AU - Zheng, Wanchao
AU - Bai, Haili
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: H.L.B. was supported by National Natural Science Foundation of China (Grant Nos.11434006, 51772207, and 51272174)
PY - 2018/5/17
Y1 - 2018/5/17
N2 - For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO3 heterostructures are fabricated on LaAlO3 substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.
AB - For developing the high-density and high-speed nonvolatile memory storage, the photoassisted electric field modulation of resistive switching in ferroelectric heterostructures is studied. Highly strained epitaxial BiFeO3 heterostructures are fabricated on LaAlO3 substrates by magnetron sputtering. The electric field-modulated wide range multilevel resistance and switchable photovoltaic effects are observed in these heterostructures. It is found that the electric field-modulated interfacial barrier can be further affected by the photogenerated excitons. Therefore, a co-modulation of light illumination and electric field on the resistive switching behavior is demonstrated, which generates four nonvolatile resistance states.
UR - http://hdl.handle.net/10754/630403
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800171
UR - http://www.scopus.com/inward/record.url?scp=85047623370&partnerID=8YFLogxK
U2 - 10.1002/aelm.201800171
DO - 10.1002/aelm.201800171
M3 - Article
AN - SCOPUS:85047623370
VL - 4
SP - 1800171
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 7
ER -