Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

S. S. Lin, J. I. Hong, J. H. Song, Y. Zhu, H. P. He, Z. Xu, Y. G. Wei, Y. Ding, R. L. Snyder, Z. L. Wang

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64 Scopus citations


We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)3877-3882
Number of pages6
JournalNano Letters
Issue number11
StatePublished - Nov 11 2009
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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