Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

S. S. Lin; J. I. Hong; J. H. Song; Y. Zhu; H. P. He; Z. Xu; Y. G. Wei; Y. Ding; R. L. Snyder; Z. L. Wang

doi:10.1021/nl902067a

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

S. S. Lin, J. I. Hong, J. H. Song, Y. Zhu, H. P. He, Z. Xu, Y. G. Wei, Y. Ding, R. L. Snyder, Z. L. Wang

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Abstract

We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

Original language	English (US)
Pages (from-to)	3877-3882
Number of pages	6
Journal	Nano Letters
Volume	9
Issue number	11
DOIs	https://doi.org/10.1021/nl902067a
State	Published - Nov 11 2009
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{91f2d65f36584447b3f07b4bbda4305a,

title = "Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays",

abstract = "We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. {\textcopyright} 2009 American Chemical Society.",

author = "Lin, {S. S.} and Hong, {J. I.} and Song, {J. H.} and Y. Zhu and He, {H. P.} and Z. Xu and Wei, {Y. G.} and Y. Ding and Snyder, {R. L.} and Wang, {Z. L.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Lin, S. S.

AU - Hong, J. I.

AU - Song, J. H.

AU - Zhu, Y.

AU - He, H. P.

AU - Xu, Z.

AU - Wei, Y. G.

AU - Ding, Y.

AU - Snyder, R. L.

AU - Wang, Z. L.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2009/11/11

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N2 - We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

AB - We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.

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JO - Nano Letters

JF - Nano Letters

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ER -

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

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