We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices. © 2009 American Chemical Society.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Nov 11 2009|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors thank J. X. Wu for assistance of valence-band X-ray photoelectron spectroscopy tests and X. Q. Gu for assistance of the temperature-dependent photoluminescence measurements. This research was supported by DARPA (Army/AMOCOM/REDSTONE AR, W31P4Q-08-1-0009), BESDOE (DE-FG-02-07ER46394), Air Force Office (FA9550-08-1-0046), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership. S.S.L. thanks the partial fellowship supported by the China Scholarship Council (CSC) (No. 20083019).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.