Phonon-limited mobility and quantum transport in fluorinated diamane MOSFETs from the first-principles calculations

Linpeng Dong, Penghui Li, Chong Li, Iman S. Roqan, Bo Peng, Bin Xin, Weiguo Liu

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Two-dimensional diamane with outstanding properties is promising for advanced nanodevice applications, whereas a comprehensive understanding of phonon-limited mobility as well as the prediction of device performance limit is still lacking. Here we report on phonon-limited mobility simulation in fluorinated diamane monolayer using first-principles calculations, with consideration of both elastic and inelastic phonon scattering processes based on Boltzmann transport equation. We construct sub-7 nm fluorinated diamane metal-oxide-semiconductor field-effect transistors (MOSFET) to investigate their quantum transport properties by first-principles calculations based on density functional theory coupling with the non-equilibrium Green's function formalism. Our findings show that fluorinated diamane mobility is concentration-dependent, with the electron and hole mobility reaching as high as 4390 and 10100 cm2V−1s−1, respectively, at the 1014 cm−2 carrier concentration. Our simulations reveal that the key figures of merits (FOMs) of fluorinated diamane MOSFETs are benchmarked against the International Technology Roadmap for Semiconductors (ITRS) standards for high-performance (HP) and low-power (LP) applications, showing superior potential compared to the most reported 2D materials. The simulated results demonstrate that the on-current, delay time, and power-delay product meet the ITRS requirements for HP and LP applications, including devices constructed with nano-scale channel length (≥3 and 5 nm) respectively. Finally, we show that the performance of a 32-bit ALU based on fluorinated diamane MOSFETs is comparable with emerging beyond-CMOS devices. Thus, our results shed light on the electronic properties of fluorinated diamane, making it superior to serve as a channel material in the post-silicon era.
Original languageEnglish (US)
JournalCarbon
DOIs
StatePublished - Dec 26 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-28
Acknowledgements: The authors would like to acknowledge the financial support partially by the National Natural Science Foundation of China (62104186, 62004153), Key Research and Development Program of Shaanxi Province (2019ZDLGY16-01), Natural Science Foundation of Shaanxi science and Technology Department (021JM-432), Shaanxi Province Natural Science Basic Research Project (2022JQ-678), and Natural Science Foundation of Education Department of Shaanxi Province (21JK0696).

ASJC Scopus subject areas

  • General Chemistry

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