Spintronic diodes are emerging as disruptive candidates for impacting several technological applications ranging from the Internet of things to artificial intelligence. Here, an overview of the recent achievements on spintronic diodes is briefly presented, underlying the major breakthroughs that have led these devices to have the largest sensitivity measured to date for a diode. For each class of spintronic diodes (passive, active, resonant, nonresonant), we indicate the remaining developments to improve the performances as well as the future directions. We also devoted the last part of this Perspective to ideas for developing spintronic diodes in multiphysics systems by combining two-dimensional materials and antiferromagnets.
Bibliographical noteKAUST Repository Item: Exported on 2021-04-26
Acknowledgements: This work was supported under Grant No. 2019-1-U.0. (“Diodi spintronici rad-hard ad elevate sensitivita—DIOSPIN”) funded by the Italian Space Agency (ASI) within the call “Nuove idee per la componentistica spaziale del futuro” and the Executive Programme of Scientific and Technological Cooperation Between Italy and China (No. 2016YFE0104100). R.T. and G.F. thank the project “ThunderSKY” funded by the Hellenic Foundation for Research and Innovation and the General Secretariat for Research and Technology, under Grant No. 871. This work was partially supported by the National Science Foundation of China (No. 11804370).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)