Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

Chen Shang, Yating Wan, Jennifer Selvidge, Eamonn Hughes, Robert Herrick, Kunal Mukherjee, Jianan Duan, Frederic Grillot, Weng W. Chow, John E. Bowers

Research output: Contribution to journalArticlepeer-review

62 Scopus citations


Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs show greatly improved tolerance to defects and promise other advantages such as low transparency current density, high temperature operation, isolator-free operation, and enhanced four-wave-mixing. These material properties distinguish them from traditional III-V/Si quantum wells (QWs) and have spawned intense interest to explore a full set of photonic integration using epitaxial growth technology. We present here a summary of the most recent developments of QD lasers grown on a CMOS-compatible (001) Si substrate, with a focus on breakthroughs in long lifetime at elevated temperatures. Threading dislocations are significantly reduced to the level of 1 × 106cm-2via a novel asymmetric step-graded filter. Misfit dislocations are efficiently blocked from the QD region through well-engineered trapping layers. A record-breaking extrapolated lifetime of more than 200000 hours has been achieved at 80 °C, forecasting that device reliability is now entering the realm of commercial relevance and a monolithically integrated light source is finally on the horizon.
Original languageEnglish (US)
Pages (from-to)2555-2566
Number of pages12
Issue number9
StatePublished - Sep 15 2021
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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