Perspectives for A-SI/C-SI heterojunction solar cells with P or N type base

L. Carnel*, G. Agostinelli, A. Ulyashin, C. Solanki, H. Kim, S. De Wolf, G. Beaucarne, J. Poortmans

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


In this paper, an overview is presented of amorphous silicon - crystalline silicon heterojunction solar cells on different base materials. We also tried to make a comparison with the classically used thermal diffusion. Cells were made with efficiencies of 15.8 % and open circuit voltages up to 620 mV on p-type 1 Ωcm Fz material without the use of high efficiency features. When switching to 0.5 Ωcm p-type Fz material Voc values increased up to 650 mV with a maximum efficiency of 16.4 %. To be able to compare the p or n type base for the heterojunction approach, we also investigated the heterojunction emitter on n type Cz material with a thermally in-diffused phosphorus BSF. The highest efficiency achieved so far on this n-type material was 14.1% with a maximum Voc of 630 mV. Despite the known shortcomings of p-type base hetero-junction solar cells compared to n-type base hetero-junction solar cells, they might find application in thin film solar cells. First result on thin freestanding films yielded efficiencies up to 9.6%. Using the heterojunction emitter instead of the diffused emitter higher V oc were obtained on several investigated materials.

Original languageEnglish (US)
Pages (from-to)1157-1160
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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