Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

B. S. Tao; D. L. Li; Z. H. Yuan; H. F. Liu; S. S. Ali; J. F. Feng; H. X. Wei; X. F. Han; Y. Liu; Y. G. Zhao; Q. Zhang; Zaibing Guo; Xixiang Zhang

doi:10.1063/1.4895671

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

B. S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han, Y. Liu, Y. G. Zhao, Q. Zhang, Zaibing Guo, Xixiang Zhang

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Abstract

Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

Original language	English (US)
Pages (from-to)	102407
Journal	Applied Physics Letters
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.4895671
State	Published - Sep 8 2014

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KAUST Repository Item: Exported on 2020-10-01

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@article{dfc1a7e569014d058299491e5ca0d140,

title = "Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction",

abstract = "Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.",

author = "Tao, {B. S.} and Li, {D. L.} and Yuan, {Z. H.} and Liu, {H. F.} and Ali, {S. S.} and Feng, {J. F.} and Wei, {H. X.} and Han, {X. F.} and Y. Liu and Zhao, {Y. G.} and Q. Zhang and Zaibing Guo and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2014",

month = sep,

day = "8",

doi = "10.1063/1.4895671",

language = "English (US)",

volume = "105",

pages = "102407",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

AU - Tao, B. S.

AU - Li, D. L.

AU - Yuan, Z. H.

AU - Liu, H. F.

AU - Ali, S. S.

AU - Feng, J. F.

AU - Wei, H. X.

AU - Han, X. F.

AU - Liu, Y.

AU - Zhao, Y. G.

AU - Zhang, Q.

AU - Guo, Zaibing

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/9/8

Y1 - 2014/9/8

N2 - Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

AB - Magnetic properties of Co40Fe40B20(CoFeB) thin films sandwiched between Ta and MgAl2O4layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki=1.22erg/cm2, which further increases to 1.30erg/cm2after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0nm, while that for top CoFeB layer is between 0.8 and 1.4nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

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U2 - 10.1063/1.4895671

DO - 10.1063/1.4895671

M3 - Article

SN - 0003-6951

VL - 105

SP - 102407

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

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