Performance of temperature tuned red laser diode employing self injection locking scheme

Sani Mukhtar, Islam Ashry, Jorge Alberto Holguin Lerma, Tien Khee Ng, Boon S. Ooi, M. Z.M. Khan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

First report on substantial performance improvement by 2-4 times of temperature tuned InGaP/InGaAlP/InP ~635 nm red laser diode based tunable self-injection (SIL) locked system in terms of optical linewidth, SMSR, exhibiting 7.5 nm wavelength span.
Original languageEnglish (US)
Title of host publicationFrontiers in Optics / Laser Science
PublisherOSA
ISBN (Print)9781557528209
DOIs
StatePublished - 2020

Bibliographical note

KAUST Repository Item: Exported on 2022-04-14
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, REP/1/2878-01-01
Acknowledgements: SM and MZMK would like to thank KFUPM for supporting this work, while IA, JAH, TKN and BSO acknowledge KAUST baseline funding (BAS/1/1614-01-01). All authors acknowledge funding support from KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01), and King Abdul-Aziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP- 008 and EE002381).

Fingerprint

Dive into the research topics of 'Performance of temperature tuned red laser diode employing self injection locking scheme'. Together they form a unique fingerprint.

Cite this