Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect

Divyanshu Divyanshu; Amit Kumar Goyal; Yehia Massoud

doi:10.1109/NANO58406.2023.10231245

Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect

Divyanshu Divyanshu, Amit Kumar Goyal, Yehia Massoud^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work investigates the generation and enhancement of the photonic spin hall effect (PSHE) in a hetero-structure-based nanophotonic resonator structure. A bi-layer nanophotonic structure having a center defect layer is considered for the analysis. The impact of incidence angle and defect layer thickness on PSHE generation is thoroughly investigated. The PSHE-induced spin splitting exhibits a strong dependency on the defect layer's optical thickness. The analytical results demonstrate a maximum PSHE transverse displacement of around 5.57 times the incident wavelength, which is around 39.25% higher than the recently reported values. Additionally, the structure shows a defect layer thickness tolerance of around 15.6 nm to obtain an enhanced PSHE.

Original language	English (US)
Title of host publication	2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023
Publisher	IEEE Computer Society
Pages	763-766
Number of pages	4
ISBN (Electronic)	9798350333466
DOIs	https://doi.org/10.1109/NANO58406.2023.10231245
State	Published - 2023
Event	23rd IEEE International Conference on Nanotechnology, NANO 2023 - Jeju City, Korea, Republic of Duration: Jul 2 2023 → Jul 5 2023

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2023-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	23rd IEEE International Conference on Nanotechnology, NANO 2023
Country/Territory	Korea, Republic of
City	Jeju City
Period	07/2/23 → 07/5/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO58406.2023.10231245

Cite this

Divyanshu, D., Goyal, A. K., & Massoud, Y. (2023). Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect. In 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023 (pp. 763-766). (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July). IEEE Computer Society. https://doi.org/10.1109/NANO58406.2023.10231245

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title = "Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect",

abstract = "This work investigates the generation and enhancement of the photonic spin hall effect (PSHE) in a hetero-structure-based nanophotonic resonator structure. A bi-layer nanophotonic structure having a center defect layer is considered for the analysis. The impact of incidence angle and defect layer thickness on PSHE generation is thoroughly investigated. The PSHE-induced spin splitting exhibits a strong dependency on the defect layer's optical thickness. The analytical results demonstrate a maximum PSHE transverse displacement of around 5.57 times the incident wavelength, which is around 39.25% higher than the recently reported values. Additionally, the structure shows a defect layer thickness tolerance of around 15.6 nm to obtain an enhanced PSHE.",

author = "Divyanshu Divyanshu and Goyal, {Amit Kumar} and Yehia Massoud",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 23rd IEEE International Conference on Nanotechnology, NANO 2023 ; Conference date: 02-07-2023 Through 05-07-2023",

year = "2023",

doi = "10.1109/NANO58406.2023.10231245",

language = "English (US)",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "763--766",

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Divyanshu, D , Goyal, AK & Massoud, Y 2023, Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect. in 2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. Proceedings of the IEEE Conference on Nanotechnology, vol. 2023-July, IEEE Computer Society, pp. 763-766, 23rd IEEE International Conference on Nanotechnology, NANO 2023, Jeju City, Korea, Republic of, 07/2/23. https://doi.org/10.1109/NANO58406.2023.10231245

Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect. / Divyanshu, Divyanshu ; Goyal, Amit Kumar ; Massoud, Yehia.
2023 IEEE 23rd International Conference on Nanotechnology, NANO 2023. IEEE Computer Society, 2023. p. 763-766 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect

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AU - Goyal, Amit Kumar

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PY - 2023

Y1 - 2023

N2 - This work investigates the generation and enhancement of the photonic spin hall effect (PSHE) in a hetero-structure-based nanophotonic resonator structure. A bi-layer nanophotonic structure having a center defect layer is considered for the analysis. The impact of incidence angle and defect layer thickness on PSHE generation is thoroughly investigated. The PSHE-induced spin splitting exhibits a strong dependency on the defect layer's optical thickness. The analytical results demonstrate a maximum PSHE transverse displacement of around 5.57 times the incident wavelength, which is around 39.25% higher than the recently reported values. Additionally, the structure shows a defect layer thickness tolerance of around 15.6 nm to obtain an enhanced PSHE.

AB - This work investigates the generation and enhancement of the photonic spin hall effect (PSHE) in a hetero-structure-based nanophotonic resonator structure. A bi-layer nanophotonic structure having a center defect layer is considered for the analysis. The impact of incidence angle and defect layer thickness on PSHE generation is thoroughly investigated. The PSHE-induced spin splitting exhibits a strong dependency on the defect layer's optical thickness. The analytical results demonstrate a maximum PSHE transverse displacement of around 5.57 times the incident wavelength, which is around 39.25% higher than the recently reported values. Additionally, the structure shows a defect layer thickness tolerance of around 15.6 nm to obtain an enhanced PSHE.

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M3 - Conference contribution

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T3 - Proceedings of the IEEE Conference on Nanotechnology

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Performance Analysis of Hetero-Structure Nanoresonator Assisted Enhanced Photonic Spin Hall Effect

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