Passivated contacts to n+ and p+ silicon based on amorphous silicon and thin dielectrics

James Bullock; Di Yan; Andres Cuevas; Benedicte Demaurex; Aicha Hessler-Wyser; Stefaan De Wolf

doi:10.1109/PVSC.2014.6925674

Passivated contacts to n⁺ and p⁺ silicon based on amorphous silicon and thin dielectrics

James Bullock, Di Yan, Andres Cuevas, Benedicte Demaurex, Aicha Hessler-Wyser, Stefaan De Wolf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper compares standard MIS contacts to a newly developed contact structure, involving hydrogenated amorphous silicon (a-Si:H) over-layers. The contact structures are trialed on both n⁺ and p⁺ lightly diffused surfaces, with SiO₂ and Al₂O₃ insulator layers, respectively. In both cases significant improvements in the carrier-selectivity of the contacts is achieved with the addition of the a-Si:H over-layers. Simulations of idealized cell structures are used to highlight the performance and technological benefits of these carrier-selective structures over standard locally diffused contacts.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3442-3447
Number of pages	6
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925674
State	Published - Oct 15 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	06/8/14 → 06/13/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

amorphous silicon
contact passivation
high efficiency
selective contacts
silicon solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925674

Cite this

Bullock, J., Yan, D., Cuevas, A., Demaurex, B., Hessler-Wyser, A., & Wolf, S. D. (2014). Passivated contacts to n⁺ and p⁺ silicon based on amorphous silicon and thin dielectrics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3442-3447). Article 6925674 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925674

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abstract = "Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 {\AA} is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper compares standard MIS contacts to a newly developed contact structure, involving hydrogenated amorphous silicon (a-Si:H) over-layers. The contact structures are trialed on both n+ and p+ lightly diffused surfaces, with SiO2 and Al2O3 insulator layers, respectively. In both cases significant improvements in the carrier-selectivity of the contacts is achieved with the addition of the a-Si:H over-layers. Simulations of idealized cell structures are used to highlight the performance and technological benefits of these carrier-selective structures over standard locally diffused contacts.",

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Bullock, J, Yan, D, Cuevas, A, Demaurex, B, Hessler-Wyser, A & Wolf, SD 2014, Passivated contacts to n⁺ and p⁺ silicon based on amorphous silicon and thin dielectrics. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925674, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 3442-3447, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 06/8/14. https://doi.org/10.1109/PVSC.2014.6925674

Passivated contacts to n⁺ and p⁺ silicon based on amorphous silicon and thin dielectrics. / Bullock, James; Yan, Di; Cuevas, Andres et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 3442-3447 6925674 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Carrier recombination at the metal contact regions has now become a critical obstacle to the advancement of high efficiency diffused junction silicon solar cells. The insertion of a thin dielectric interlayer - forming a metal-insulator-semiconductor (MIS) contact - is a known approach to reduce contact recombination. However, an insulator thickness less than 25 Å is usually required for current transport, making it difficult to simultaneously achieve good surface passivation. This paper compares standard MIS contacts to a newly developed contact structure, involving hydrogenated amorphous silicon (a-Si:H) over-layers. The contact structures are trialed on both n+ and p+ lightly diffused surfaces, with SiO2 and Al2O3 insulator layers, respectively. In both cases significant improvements in the carrier-selectivity of the contacts is achieved with the addition of the a-Si:H over-layers. Simulations of idealized cell structures are used to highlight the performance and technological benefits of these carrier-selective structures over standard locally diffused contacts.

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Bullock J, Yan D, Cuevas A, Demaurex B, Hessler-Wyser A, Wolf SD. Passivated contacts to n⁺ and p⁺ silicon based on amorphous silicon and thin dielectrics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 3442-3447. 6925674. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925674