Parametric study of InP backside processing using high density plasma etching

Y. W. Chen; B. S. Ooi; G. I. Ng; C. L. Tan

Parametric study of InP backside processing using high density plasma etching

Y. W. Chen^*, B. S. Ooi, G. I. Ng, C. L. Tan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl₂/Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl₂ percentage in the Cl₂/Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 μm deep tapered profile has been achieved using a approximately 4 μm/min process without intentionally heating up the electrode. The gradient of the via was about 77° and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.

Original language	English (US)
Pages (from-to)	186-189
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2000
Externally published	Yes
Event	2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: May 14 2000 → May 18 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{2609126177d241f88a4952ee22f1a154,

title = "Parametric study of InP backside processing using high density plasma etching",

abstract = "In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl2/Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl2 percentage in the Cl2/Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 μm deep tapered profile has been achieved using a approximately 4 μm/min process without intentionally heating up the electrode. The gradient of the via was about 77° and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.} and Tan, {C. L.}",

year = "2000",

language = "English (US)",

pages = "186--189",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2000 Through 18-05-2000",

}

TY - JOUR

T1 - Parametric study of InP backside processing using high density plasma etching

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Tan, C. L.

PY - 2000

Y1 - 2000

N2 - In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl2/Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl2 percentage in the Cl2/Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 μm deep tapered profile has been achieved using a approximately 4 μm/min process without intentionally heating up the electrode. The gradient of the via was about 77° and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.

AB - In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl2/Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl2 percentage in the Cl2/Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 μm deep tapered profile has been achieved using a approximately 4 μm/min process without intentionally heating up the electrode. The gradient of the via was about 77° and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.

UR - http://www.scopus.com/inward/record.url?scp=0033690299&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033690299

SN - 1092-8669

SP - 186

EP - 189

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2000 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2000 through 18 May 2000

ER -

Parametric study of InP backside processing using high density plasma etching

Abstract

ASJC Scopus subject areas

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