Parametric study of high-performance 1.55 μm InAs quantum dot microdisk lasers on Si

In this paper, we present a parametric study of high performance microdisk lasers at 1.55 μm telecom wavelength, monolithically grown on on-axis (001) Si substrates incorporating quantum dots (QDs) as gain elements. In the optimized structure, seven layers of QDs were adopted to provide a high gain as well as a suppressed inhomogeneous broadening. The same laser structure employing quantum wells (QWs) on Si was concurrently evaluated, showing a higher threshold and more dispersive quantum efficiency than the QDs. Finally, a statistical comparison of these Si-based QD microdisk lasers with those grown on InP native substrates was conducted, revealing somewhat higher thresholds but of the same order. The monolithically grown QD microlasers on Si also demonstrated excellent temperature stability, with a record high characteristic temperature of 277 K. This work thus offers helpful insight towards the optimization of reliable Si-based QD lasers at 1550 nm.