P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

K. Ohkawa; T. Mitsuyu

doi:10.1063/1.350271

P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

K. Ohkawa^*, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×10¹⁵ cm^-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I₁ at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.

Original language	English (US)
Pages (from-to)	439-442
Number of pages	4
Journal	Journal of Applied Physics
Volume	70
Issue number	1
DOIs	https://doi.org/10.1063/1.350271
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping",

abstract = "We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×1015 cm-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.",

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year = "1991",

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AU - Ohkawa, K.

AU - Mitsuyu, T.

PY - 1991

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N2 - We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×1015 cm-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.

AB - We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×1015 cm-3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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P-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping

Abstract

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