P-channel thin-film transistors based on spray-coated Cu2O films

Pichaya Pattanasattayavong; Stuart Thomas; George Adamopoulos; Martyn A. McLachlan; Thomas D. Anthopoulos

doi:10.1063/1.4803085

P-channel thin-film transistors based on spray-coated Cu₂O films

Pichaya Pattanasattayavong, Stuart Thomas, George Adamopoulos, Martyn A. McLachlan, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

Thin films of cuprous oxide (Cu₂O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu₂O films was performed using bottom-gate, bottom-contact transistors based on SiO₂ gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10^-4-10^-3 cm² V^-1 s^-1 with some devices exhibiting values close to 1 × 10^-2 cm² V^-1 s ^-1.

Original language	English (US)
Article number	163505
Journal	Applied Physics Letters
Volume	102
Issue number	16
DOIs	https://doi.org/10.1063/1.4803085
State	Published - Apr 22 2013
Externally published	Yes

Bibliographical note

Funding Information:
P.P. and T.D.A. thank Anandamahidol Foundation, Thailand, and Cambridge Display Technology (CDT), UK, for the financial support. T.D.A. is also grateful to European Research Council (ERC) AMPRO Project No. 280221 for the financial support.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4803085

Cite this

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title = "P-channel thin-film transistors based on spray-coated Cu2O films",

abstract = "Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.",

author = "Pichaya Pattanasattayavong and Stuart Thomas and George Adamopoulos and McLachlan, {Martyn A.} and Anthopoulos, {Thomas D.}",

note = "Funding Information: P.P. and T.D.A. thank Anandamahidol Foundation, Thailand, and Cambridge Display Technology (CDT), UK, for the financial support. T.D.A. is also grateful to European Research Council (ERC) AMPRO Project No. 280221 for the financial support.",

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AU - Thomas, Stuart

AU - Adamopoulos, George

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

N1 - Funding Information: P.P. and T.D.A. thank Anandamahidol Foundation, Thailand, and Cambridge Display Technology (CDT), UK, for the financial support. T.D.A. is also grateful to European Research Council (ERC) AMPRO Project No. 280221 for the financial support.

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Y1 - 2013/4/22

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AB - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.

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