P-channel thin-film transistors based on spray-coated Cu2O films

Pichaya Pattanasattayavong, Stuart Thomas, George Adamopoulos, Martyn A. McLachlan, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

100 Scopus citations


Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.

Original languageEnglish (US)
Article number163505
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 22 2013
Externally publishedYes

Bibliographical note

Funding Information:
P.P. and T.D.A. thank Anandamahidol Foundation, Thailand, and Cambridge Display Technology (CDT), UK, for the financial support. T.D.A. is also grateful to European Research Council (ERC) AMPRO Project No. 280221 for the financial support.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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