Effects of oxygen doping on the electrical properties of α-NiPc based devices were investigated using in situ and ex situ I-V measurements. Photovoltaic performance of the Schottky devices was assessed under white light illumination through the semitransparent top Pb electrode supplied by a 500 W halogen lamp. Results demonstrated that simple exposure of α-NiPc films to dry air resulted in efficient p-type doping.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Mar 10 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)