Oxide Thin-Film Electronics using All-MXene Electrical Contacts

Zhenwei Wang, Hyunho Kim, Husam N. Alshareef*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

192 Scopus citations

Abstract

2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

Original languageEnglish (US)
Article number1706656
JournalAdvanced Materials
Volume30
Issue number15
DOIs
StatePublished - Apr 12 2018

Bibliographical note

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • MXene
  • complementary metal oxide semiconductor
  • tin monoxide
  • zinc oxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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