Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Arthur Useinov; Oleg Mryasov; Jürgen Kosel

doi:10.1016/j.jmmm.2012.04.025

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Arthur Useinov, Oleg Mryasov, Jürgen Kosel

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Abstract

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	2844-2848
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	324
Issue number	18
DOIs	https://doi.org/10.1016/j.jmmm.2012.04.025
State	Published - May 7 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2012.04.025

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title = "Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior",

abstract = "In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. {\textcopyright} 2012 Elsevier B.V. All rights reserved.",

author = "Arthur Useinov and Oleg Mryasov and J{\"u}rgen Kosel",

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T1 - Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

AU - Useinov, Arthur

AU - Mryasov, Oleg

AU - Kosel, Jürgen

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PY - 2012/5/7

Y1 - 2012/5/7

N2 - In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

AB - In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

UR - http://hdl.handle.net/10754/235691

UR - http://linkinghub.elsevier.com/retrieve/pii/S0304885312003721

UR - http://www.scopus.com/inward/record.url?scp=84861719447&partnerID=8YFLogxK

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DO - 10.1016/j.jmmm.2012.04.025

M3 - Article

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 18

ER -

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

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