Out-of-plane strain effect on silicon-based flexible FinFETs

Mohamed T. Ghoneim, Nasir Alfaraj, Galo T. Sevilla, Hossain M. Fahad, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.
Original languageEnglish (US)
Title of host publication2015 73rd Annual Device Research Conference (DRC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)9781467381345
StatePublished - Aug 12 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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