Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

H. G. Ong; J. W. Cheah; X. Zou; B. Li; X. H. Cao; H. Tantang; L. J. Li; H. Zhang; G. C. Han; J. Wang

doi:10.1088/0022-3727/44/28/285301

Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

H. G. Ong, J. W. Cheah, X. Zou, B. Li, X. H. Cao, H. Tantang, L. J. Li, H. Zhang^*, G. C. Han, J. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO₂ interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO₂ surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.

Original language	English (US)
Article number	285301
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	28
DOIs	https://doi.org/10.1088/0022-3727/44/28/285301
State	Published - Jul 20 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/44/28/285301

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title = "Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor",

abstract = "Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.",

author = "Ong, {H. G.} and Cheah, {J. W.} and X. Zou and B. Li and Cao, {X. H.} and H. Tantang and Li, {L. J.} and H. Zhang and Han, {G. C.} and J. Wang",

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T1 - Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

AU - Ong, H. G.

AU - Cheah, J. W.

AU - Zou, X.

AU - Li, B.

AU - Cao, X. H.

AU - Tantang, H.

AU - Li, L. J.

AU - Zhang, H.

AU - Han, G. C.

AU - Wang, J.

PY - 2011/7/20

Y1 - 2011/7/20

N2 - Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.

AB - Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.

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U2 - 10.1088/0022-3727/44/28/285301

DO - 10.1088/0022-3727/44/28/285301

M3 - Article

AN - SCOPUS:79960240910

SN - 0022-3727

VL - 44

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 28

M1 - 285301

ER -

Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Abstract

ASJC Scopus subject areas

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