Origin of hot carriers in InGaN-based quantum-well solar cells

K. Y. Lai; G. J. Lin; C. Y. Chen; Y. L. Lai; J. H. He

doi:10.1109/LED.2010.2091619

Origin of hot carriers in InGaN-based quantum-well solar cells

K. Y. Lai, G. J. Lin, C. Y. Chen, Y. L. Lai, J. H. He

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

In_xGa1-_xN/GaN multiple quantum-well (QW) (MQW) solar cells with _x = 0.30 and 0.15 were characterized. The MQWs with _x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for _x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.

Original language	English (US)
Article number	5671457
Pages (from-to)	179-181
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	2
DOIs	https://doi.org/10.1109/LED.2010.2091619
State	Published - Feb 2011
Externally published	Yes

Keywords

Electron carriers
gallium compounds
quantum wells (QWs)
solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2091619

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@article{57fb953917634f7580c33059f5ee3cc2,

title = "Origin of hot carriers in InGaN-based quantum-well solar cells",

abstract = "InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.",

keywords = "Electron carriers, gallium compounds, quantum wells (QWs), solar cells",

author = "Lai, {K. Y.} and Lin, {G. J.} and Chen, {C. Y.} and Lai, {Y. L.} and He, {J. H.}",

year = "2011",

month = feb,

doi = "10.1109/LED.2010.2091619",

language = "English (US)",

volume = "32",

pages = "179--181",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Origin of hot carriers in InGaN-based quantum-well solar cells

AU - Lai, K. Y.

AU - Lin, G. J.

AU - Chen, C. Y.

AU - Lai, Y. L.

AU - He, J. H.

PY - 2011/2

Y1 - 2011/2

N2 - InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.

AB - InxGa1-xN/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.

KW - Electron carriers

KW - gallium compounds

KW - quantum wells (QWs)

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=79151469012&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2091619

DO - 10.1109/LED.2010.2091619

M3 - Article

AN - SCOPUS:79151469012

SN - 0741-3106

VL - 32

SP - 179

EP - 181

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5671457

ER -

Origin of hot carriers in InGaN-based quantum-well solar cells

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Keywords

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