Origin of hot carriers in InGaN-based quantum-well solar cells

K. Y. Lai, G. J. Lin, C. Y. Chen, Y. L. Lai, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


In x Ga1- x N/GaN multiple quantum-well (QW) (MQW) solar cells with x = 0.30 and 0.15 were characterized. The MQWs with x = 0.30 show deteriorated performances due to the inferior crystal qualities. At the temperatures above 200 K, the conversion efficiency (.) for x = 0.30 exhibits an abrupt increase led by the thermally activated carriers. Two potential origins are proposed for the hot carriers: 1) the native shallow donors in the MQWs and 2) the shallow QWs due to the compositional fluctuations. According to the distinct behavior of the device with x = 0.15, it is believed that the shallow QWs lead to the abrupt increase inη.

Original languageEnglish (US)
Article number5671457
Pages (from-to)179-181
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 1 2011


  • Electron carriers
  • gallium compounds
  • quantum wells (QWs)
  • solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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