Origin of green emission and charge trapping dynamics in ZnO nanowires

Mingjie Li*, Guichuan Xing, Guozhong Xing, Bo Wu, Tom Wu, Xinhai Zhang, Tze Chien Sum

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


The origins of the commonly observed green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies over the past few decades. Herein, through a comprehensive ultrafast optical spectroscopy study, new insights into its origin and the charge trapping dynamics at the GE centers in ZnO nanowires prepared by the vapor transport method are gained. Transient absorption spectroscopy (TAS) revealed a sub-band-gap absorption bleaching band arising from the state filling of the electrons in the conduction band and holes trapped in the GE centers. The GE originates from the recombination between the electrons in the conduction band and/or shallow donor levels and the holes trapped at the GE centers (which are located at ∼0.88 eV above the valence band). Importantly, an ultrafast excitonic Auger-type hole trapping process to the GE centers occurring in a subpicosecond time scale was also uncovered by TAS - shedding new light on the mechanism behind the fast and efficient charge trapping of photoexcited carriers. The knowledge gained is crucial for the development of ZnO-based optoelectronic devices.

Original languageEnglish (US)
Article number115309
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - Mar 18 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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