Origin of Competing Blue and Green Emission in InGaN/GaN Quantum-Disks in Nanowires Heterostructure

Aditya Prabaswara, Tien Khee Ng, Dalaver H. Anjum, Nini Wei, Chao Zhao, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Munir M. EI-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.
Original languageEnglish (US)
Title of host publication2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)
PublisherIEEE
ISBN (Print)9781467393621
DOIs
StatePublished - 2015

Bibliographical note

KAUST Repository Item: Exported on 2021-12-13

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