TY - PAT
T1 - Organic tunnel field effect transistors
AU - Tietze, Max Lutz
AU - Lussem, Bjorn
AU - Liu, Shiyi
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2017/6/29
Y1 - 2017/6/29
N2 - Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.
AB - Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.
UR - http://hdl.handle.net/10754/625327
UR - http://www.google.com/patents/WO2017109734A1
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017109734A1&KC=A1&FT=D
M3 - Patent
M1 - WO 2017109734 A1
ER -