Organic tunnel field effect transistors

Max Lutz Tietze (Inventor), Bjorn Lussem (Inventor), Shiyi Liu (Inventor)

Research output: Patent


Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.
Original languageEnglish (US)
Patent numberWO 2017109734 A1
StatePublished - Jun 29 2017

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13


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